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[www.ferro-alloys.com]Molybdenum disulfide can be used to fabricate high-performance transistors thanks to its tunable bandgaps and high mobility. Nevertheless, researchers need to evaluate the work function evolution of MoS2 under metals and charge transfer at interfaces to reduce the contact resistance. Reporting in Nanotechnology researchers at Fudan University in China use a direct ultraviolet photoelectron spectroscopy method to demonstrate that the Schottky barrier at metal-MoS2 interfaces could be tailored by both the type and thickness of the deposited metal.

Dipoles are formed at the MoS2/metal interfaces upon deposition of metals with a different work function on the MoS2surface as a result of the charge redistribution. A Schottky barrier also forms, which hinders carrier injection from metal to MoS2 films. Experimental investigations on work function evolution of MoS2 under metal films and charge transfer at interfaces is critical in order to understand the interface mechanism and achieve a good ohmic contact.

• [Editor:Jiang Li Juan ]